EEE 1st Year - 1st sem | Electronic Components - Device Syllabus

Electronic Components & Devices

(Common with Electronics Engineering)

Topic wise Distribution

Units

1. Introduction to Electronics, its Component and Devices, its Application
2. Passive Components
3. Voltage & Current Source
4. Semiconductor Diode
5. Introduction to Bipolar Transistor
6. Transistor Biasing & Stabilization
7. Single Stage Transistor Amplifier
8. Field Effect Transistor
9. Metal Oxide Field Effect Transistor
10. Complementary Metal Oxide Field Effect Transistor

Detailed Contents

Introduction to Electronics:

1. Application of Electronics in different fields.
2. Brief introduction to active components and devices.

Passive Components:

1. Resister- Working characteristics/ properties, Resistors-Carbon film, Metal-film, Carbon composition, Wire wound and variable type (presets and potentiometers) construction details, characteristics (size, voltage, tolerance temperature and frequency dependence and noise consideration, specification testing mutual comparison and typical applications, Voltage Dependent Resistor (V.D.R.).
2. Capacitors- Working Characteristics/properties, Capacitors-polyester, Metallized polyester, Ceramic paper mica and electrolytic tantalum and solid aluminum types, construction details and testing, specifications, mutual comparison & typical applications.
3. Inductors, Transformers and RF coils and small power and AF transformer and their testing. Properties of cores. Needs and type of shielding transformer and their testing. Properties of cores. Needs and type of shielding.

Voltage and Current Sources:

1. Concept of constant voltage source, system and graphical representation, characteristics of ideal and practical voltage source.
2. Concept of constant current source, symbol and graphical representation, characteristics of ideal and practical current sources.
3. Conversion of voltage source into a current source and vice-versa.
4. Concept of floating and grounded D.C. supplies.

Semiconductor Diode:

1. P-N junction diode, Mechanism of current flow in P-N junction drift and diffusion currents, depletion layer, potential barrier, P_N junction diode characteristics, Zener & avalanche breakdown, concept of junction capacitance in forward & reverse bias conditions.
2. semiconductor diode characteristics, dynamic resistance & their calculation from diode characteristics, dynamic resistance of diode in terms
3. Diode (P-N junction) as rectifier, Half wave rectifier full wave rectifier including bridge rectification efficiency and ripple factor for rectifier circuits, filter circuits shunt capacitor, series inductor, capacitor input filter, bleeder resistance, working of the filters and typical applications of each type.
4. Different types of diodes, characteristics and typical application of power diodes, zener diode, varactor diodes, varactor diodes, point contact diodes, tunnel diode, LED's and photo diodes.
5. Important specifications of rectifier diode and zener diode.

Introduction to Bipolar Transistor:

1. Concept of bipolar transistor as a two junction three terminal device  having two kinds of charge carriers, PNP and NPN transistors, their symbols and mechanisms of current flow, explanation of fundamental current relations. Concept of leakage current (ICBO) effect of temperature on leakage current. Standard notation for current and voltage polarity.
2. CB, CE and CC configurations.
   • Common base configuration (CB): Inputs and output characteristics, determination of transistor parameters (input and output) dynamic resistance, current amplification factor.
   • Common emitter configuration: current relations in CE configuration, collector current in terms of base current and leakage current (ICEO), relationship between the leakage current in CB and CE configuration, input and output characteristics, determination of dynamic input and output characteristics.
   • Common collector configuration: Expression for emitter current in terms of base current and leakage current and leakage current in CC configuration.
3. Comparison of CB and CE configuration with regards to dynamic input and output resistance, current gain and leakage current performance of CE configuration for low frequency voltage amplification. Typical application of CB configuration in amplification.
4. Transistor as an amplifier in CE configuration.
   • D.C. load line, its equation and drawing it on collector characteristics.
   • Determination of small signal voltage and current gain of a basis transistor amplifier using CE output characteristics and D.C. load line, Concept of power gain as a product of voltage gain and current gain.

Transistor Biasing and Stabilization of operation point:

1. Different transistor biasing circuits for fixing the operating points, effect of temperature on operating point. Need and method for saturation of operation point. Effect of fixing operating point in cut-off or saturation region on performance of amplifier.
2. Calculation of operating point for different biasing circuit, use of Thevenin's theorem in analysing potential divider biasing circuit.
3. Simple design problems on potential divider biasing circuit.

Single Stage Transistor Amplifier:

1. Analysis of Single Stage CE, CB and CC amplifier.
2. Single Stage CE amplifier circuits with proper biasing components.
3. AC load line and its use in:
   1. Calculation of current and voltage gain of a single-stage amplifier circuit.
   2. Explanation of phase reversal of the output voltage with respect to input voltage.

Field Effect Transistor (FET):

1. Construction, operation, characteristics and biasing of junction FET.
2. Analysis of Single Stage CS, CG and CD amplifiers. (Only Brief Idea)

MOSFET:

1. Construction, operation, characteristics and biasing of MOSFET in both depletion and enhancement modes.
2. Analysis of Single Stage CS, CG, and CD amplifiers. (Only Brief Idea)

CMOS:

1. Construction, operation, characteristics of CMOS in both depletion and enhancement modes.
2. Use of CMOS as Invertor, Different application of CMOS, CMOS IC.
3. Comparison of JEET, MOSFET and Bipolar transistor.